All MOSFET. TP2104N3 Datasheet

 

TP2104N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TP2104N3
   Marking Code: 2104
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.175 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO92

 TP2104N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TP2104N3 Datasheet (PDF)

 8.1. Size:721K  supertex
 tp2104.pdf

TP2104N3 TP2104N3

Supertex inc. TP2104P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description High input impedance and high gain This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well- Low power drive requirementproven, silicon-gate manufacturing process. This combination Ease of parallelingproduces a dev

 9.1. Size:687K  st
 stp210n75f6.pdf

TP2104N3 TP2104N3

STP210N75F6N-channel 75 V, 3 m, 120 A TO-220STripFET VI DeepGATE Power MOSFETFeaturesOrder code VDSS RDS(on) max IDSTP210N75F6 75 V

 9.2. Size:609K  st
 stp210nf02.pdf

TP2104N3 TP2104N3

STP210NF02STB210NF02 STB210NF02-1N-CHANNEL 20V - 0.0026 - 120A DPAK/IPAK/TO-220STripFET II POWER MOSFETAUTOMOTIVE SPECIFICTYPE VDSS RDS(on) IDSTB210NF02/-1 20 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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