STP33N10 Specs and Replacement
Type Designator: STP33N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO220
STP33N10 substitution
- MOSFET ⓘ Cross-Reference Search
STP33N10 datasheet
stp33n10.pdf
STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP33N10 100 V ... See More ⇒
stp33n10.pdf
STP33N10 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un... See More ⇒
stp33n10-.pdf
STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP33N10 100 V ... See More ⇒
stf33n60m2 sti33n60m2 stp33n60m2 stw33n60m2.pdf
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 2 3 TJmax max 1 2 1 2 I PAK TO-220FP STF33N60M2 26 A(1) TAB STI33N60M2 650 V 0.125 STP33N60M2 26 A STW33N60M2 3 3 2 2 1 ... See More ⇒
Detailed specifications: STP30N05 , STP30N05FI , STP30N06 , STP30N06FI , STP32N05L , STP32N05LFI , STP32N06L , STP32N06LFI , IRF520 , STP33N10FI , STP36N05L , STP36N05LFI , STP36N06 , STP36N06FI , STP36N06L , STP36N06LFI , STP38N06 .
Keywords - STP33N10 MOSFET specs
STP33N10 cross reference
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