STP33N10 - описание и поиск аналогов

STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP33N10 100 V

STP33N10 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.032 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D TO-220AB G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un

STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP33N10 100 V

STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 2 3 TJmax max 1 2 1 2 I PAK TO-220FP STF33N60M2 26 A(1) TAB STI33N60M2 650 V 0.125 STP33N60M2 26 A STW33N60M2 3 3 2 2 1

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 typ., 24 A MDmesh M2 Power MOSFETs in D PAK, TO-220FP, TO-220 and I PAK packages Datasheet - production data Features TAB TAB RDS(on) Order codes VDS max ID STB33N65M2 3 3 1 2 1 STF33N65M2 TO-220FP D2PAK 650 V 0.14 24 A STP33N65M2 TAB TAB STI33N65M2 Extremely low gate charge Exce

STP33N60DM6 Datasheet N-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO 220 package Features VDS RDS(on) max. ID Order code TAB STP33N60DM6 600 V 128 m 25 A Fast-recovery body diode 3 2 Lower RDS(on) per area vs previous generation 1 TO-220 Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt

STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 typ., 24 A MDmesh DM2 Power MOSFET in D PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code V @ T R max. I DS Jmax. DS(on) D STB33N60DM2 650 V 0.130 24 A STP33N60DM2 650 V 0.130 24 A STW33N60DM2 650 V 0.130 24 A Fast-recovery body diode Extremely low gate charg