All MOSFET. MCAC50N10Y Datasheet

 

MCAC50N10Y Datasheet and Replacement


   Type Designator: MCAC50N10Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 961 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN5060
 

 MCAC50N10Y substitution

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MCAC50N10Y Datasheet (PDF)

 ..1. Size:677K  mcc
mcac50n10y.pdf pdf_icon

MCAC50N10Y

MCAC50N10YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1 2 3 VGate-Threshold

 0.1. Size:677K  1
mcac50n10y-tp.pdf pdf_icon

MCAC50N10Y

MCAC50N10YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 100 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=80V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1 2 3 VGate-Threshold

 7.1. Size:899K  1
mcac50n06y-tp.pdf pdf_icon

MCAC50N10Y

MCAC50N06YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 60 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=48V, VGS=0V, TJ=25CZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshol

 7.2. Size:899K  mcc
mcac50n06y.pdf pdf_icon

MCAC50N10Y

MCAC50N06YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 60 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=48V, VGS=0V, TJ=25CZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshol

Datasheet: BSS84A , BSS84KW , MCAC10H03 , MCAC16N03 , MCAC20N15 , MCAC30N06Y , MCAC40N10YA , MCAC50N06Y , IRF3205 , MCAC60N08Y , MCAC75N02 , MCAC80N045Y , MCB160N10Y , MCG04N10A , MCG10P03 , MCG16N15 , MCG20N08 .

History: 3N80G-TM3-T | KP748B

Keywords - MCAC50N10Y MOSFET datasheet

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