MCAC50N10Y PDF and Equivalents Search

 

MCAC50N10Y Specs and Replacement

Type Designator: MCAC50N10Y

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 961 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: DFN5060

MCAC50N10Y substitution

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MCAC50N10Y datasheet

 ..1. Size:677K  mcc
mcac50n10y.pdf pdf_icon

MCAC50N10Y

MCAC50N10Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 100 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=80V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A 1 2 3 V Gate-Threshold ... See More ⇒

 0.1. Size:677K  1
mcac50n10y-tp.pdf pdf_icon

MCAC50N10Y

MCAC50N10Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 100 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=80V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A 1 2 3 V Gate-Threshold ... See More ⇒

 7.1. Size:899K  1
mcac50n06y-tp.pdf pdf_icon

MCAC50N10Y

MCAC50N06Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=48V, VGS=0V, TJ=25 C Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshol... See More ⇒

 7.2. Size:899K  mcc
mcac50n06y.pdf pdf_icon

MCAC50N10Y

MCAC50N06Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=48V, VGS=0V, TJ=25 C Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshol... See More ⇒

Detailed specifications: BSS84A, BSS84KW, MCAC10H03, MCAC16N03, MCAC20N15, MCAC30N06Y, MCAC40N10YA, MCAC50N06Y, IRF3205, MCAC60N08Y, MCAC75N02, MCAC80N045Y, MCB160N10Y, MCG04N10A, MCG10P03, MCG16N15, MCG20N08

Keywords - MCAC50N10Y MOSFET specs

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