MCAC50N10Y Specs and Replacement
Type Designator: MCAC50N10Y
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 961 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: DFN5060
MCAC50N10Y substitution
- MOSFET ⓘ Cross-Reference Search
MCAC50N10Y datasheet
mcac50n10y.pdf
MCAC50N10Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 100 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=80V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A 1 2 3 V Gate-Threshold ... See More ⇒
mcac50n10y-tp.pdf
MCAC50N10Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 100 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=80V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A 1 2 3 V Gate-Threshold ... See More ⇒
mcac50n06y-tp.pdf
MCAC50N06Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=48V, VGS=0V, TJ=25 C Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshol... See More ⇒
mcac50n06y.pdf
MCAC50N06Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 60 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA IDSS VDS=48V, VGS=0V, TJ=25 C Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshol... See More ⇒
Detailed specifications: BSS84A, BSS84KW, MCAC10H03, MCAC16N03, MCAC20N15, MCAC30N06Y, MCAC40N10YA, MCAC50N06Y, IRF3205, MCAC60N08Y, MCAC75N02, MCAC80N045Y, MCB160N10Y, MCG04N10A, MCG10P03, MCG16N15, MCG20N08
Keywords - MCAC50N10Y MOSFET specs
MCAC50N10Y cross reference
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MCAC50N10Y replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SVD3205T | APM2701AC | VS1606GS | CMI100N04 | CS7N65FA9R | SM1691OSCS
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