MCG04N10A Datasheet and Replacement
Type Designator: MCG04N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: DFN3030-8
MCG04N10A substitution
MCG04N10A Datasheet (PDF)
mcg04n10a.pdf
MCG04N10AFeatures Ultra Low On-Resistance Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information) MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C
Datasheet: MCAC30N06Y , MCAC40N10YA , MCAC50N06Y , MCAC50N10Y , MCAC60N08Y , MCAC75N02 , MCAC80N045Y , MCB160N10Y , IRF540 , MCG10P03 , MCG16N15 , MCG20N08 , MCG30N03 , MCG30N03A , MCG40N03 , MCG50N03 , MCMN2012 .
History: BSS316N
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BSS316N
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