MCG40N03 Specs and Replacement
Type Designator: MCG40N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 587 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN3333
MCG40N03 substitution
- MOSFET ⓘ Cross-Reference Search
MCG40N03 datasheet
mcg40n03.pdf
MCG40N03 Features Split Gate Trench MOSFET Technology Low Thermal Resistance Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Available Upon Request By Adding Suffix "-HF" N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range -55 C to +150 ... See More ⇒
Detailed specifications: MCAC80N045Y, MCB160N10Y, MCG04N10A, MCG10P03, MCG16N15, MCG20N08, MCG30N03, MCG30N03A, IRLZ44N, MCG50N03, MCMN2012, MCP07N65, MCP20N70, MCPF07N65, MCQ03N06, MCQ15N10B, MCQ15N10Y
Keywords - MCG40N03 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI9410BDY-T1
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