MCG40N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: MCG40N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 587 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN3333
MCG40N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCG40N03 Datasheet (PDF)
mcg40n03.pdf
MCG40N03Features Split Gate Trench MOSFET Technology Low Thermal Resistance Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free Available Upon Request By Adding Suffix "-HF" N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NTTFS4821N
History: NTTFS4821N
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