MCQ6005 MOSFET. Datasheet pdf. Equivalent
Type Designator: MCQ6005
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOP8
MCQ6005 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCQ6005 Datasheet (PDF)
mcq6005.pdf
MCQ6005Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability RatingDual Moisture Sensitivity Level 1N-Channel Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MCH6429 | 2SK1705 | NCE65NF190K
History: MCH6429 | 2SK1705 | NCE65NF190K
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918