MCU09N20 Specs and Replacement
Type Designator: MCU09N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.7 nS
Cossⓘ - Output Capacitance: 51.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO252
MCU09N20 substitution
- MOSFET ⓘ Cross-Reference Search
MCU09N20 datasheet
mcu09n20.pdf
MCU09N20 Features Fast Switching Improved dv/dt Capability Excellent Package for Good Heat Dissipation Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Rat... See More ⇒
Detailed specifications: MCQ4953, MCQ6005, MCS2305B, MCT04N10, MCT04N15, MCT04P06, MCT06P10, MCU05N60A, IRF9540N, MCU12P10, MCU18N20, MCU18P10, MCU20N06, MCU20N06A, MCU20N06B, MCU20N15, MCU20P10
Keywords - MCU09N20 MOSFET specs
MCU09N20 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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