All MOSFET. MCU09N20 Datasheet

 

MCU09N20 Datasheet and Replacement


   Type Designator: MCU09N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.7 nS
   Cossⓘ - Output Capacitance: 51.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO252
 

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MCU09N20 Datasheet (PDF)

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MCU09N20

MCU09N20Features Fast Switching Improved dv/dt Capability Excellent Package for Good Heat Dissipation Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Rat

Datasheet: MCQ4953 , MCQ6005 , MCS2305B , MCT04N10 , MCT04N15 , MCT04P06 , MCT06P10 , MCU05N60A , IRF1010E , MCU12P10 , MCU18N20 , MCU18P10 , MCU20N06 , MCU20N06A , MCU20N06B , MCU20N15 , MCU20P10 .

History: IPD25DP06NM | QM2710D

Keywords - MCU09N20 MOSFET datasheet

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