All MOSFET. MCU09N20 Datasheet

 

MCU09N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MCU09N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.8 nC
   trⓘ - Rise Time: 10.7 nS
   Cossⓘ - Output Capacitance: 51.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO252

 MCU09N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MCU09N20 Datasheet (PDF)

 ..1. Size:901K  mcc
 mcu09n20.pdf

MCU09N20 MCU09N20

MCU09N20Features Fast Switching Improved dv/dt Capability Excellent Package for Good Heat Dissipation Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Rat

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