MCU12P10 Specs and Replacement
Type Designator: MCU12P10
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO252
MCU12P10 substitution
- MOSFET ⓘ Cross-Reference Search
MCU12P10 datasheet
mcu12p10.pdf
MCU12P10 Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1 MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering In... See More ⇒
Detailed specifications: MCQ6005, MCS2305B, MCT04N10, MCT04N15, MCT04P06, MCT06P10, MCU05N60A, MCU09N20, IRF4905, MCU18N20, MCU18P10, MCU20N06, MCU20N06A, MCU20N06B, MCU20N15, MCU20P10, MCU40N10
Keywords - MCU12P10 MOSFET specs
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