All MOSFET. MCU12P10 Datasheet

 

MCU12P10 Datasheet and Replacement


   Type Designator: MCU12P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO252
 

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MCU12P10 Datasheet (PDF)

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MCU12P10

MCU12P10Features Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Reliable and Rugged Epoxy Meets UL 94 V-0 Flammability Rating P-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering In

Datasheet: MCQ6005 , MCS2305B , MCT04N10 , MCT04N15 , MCT04P06 , MCT06P10 , MCU05N60A , MCU09N20 , IRF4905 , MCU18N20 , MCU18P10 , MCU20N06 , MCU20N06A , MCU20N06B , MCU20N15 , MCU20P10 , MCU40N10 .

History: DMN1029UFDB | CJM1206

Keywords - MCU12P10 MOSFET datasheet

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