All MOSFET. MCU18P10 Datasheet

 

MCU18P10 Datasheet and Replacement


   Type Designator: MCU18P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252
 

 MCU18P10 substitution

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MCU18P10 Datasheet (PDF)

 ..1. Size:654K  mcc
 mcu18p10.pdf pdf_icon

MCU18P10

MCU18P10Features High Density Cell Design for Ultra Low RDS(on) Advanced Trench Process Technology ESD Protection Rugged and ReliableP-CHANNEL Epoxy Meets UL 94 V-0 Flammability RatingMOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant.

 9.1. Size:890K  mcc
 mcu18n20.pdf pdf_icon

MCU18P10

MCU18N20Features Fast Switching Improved dv/dt Capability Excellent Package for Good Heat Dissipation Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Rat

Datasheet: MCT04N10 , MCT04N15 , MCT04P06 , MCT06P10 , MCU05N60A , MCU09N20 , MCU12P10 , MCU18N20 , AO3400 , MCU20N06 , MCU20N06A , MCU20N06B , MCU20N15 , MCU20P10 , MCU40N10 , MCU60N04A , MCU80N06A .

History: BUK964R2-80E | BRCS20P06DP | WML36N60F2 | 2SK2257-01 | BUK9K134-100E | MPSY65M650

Keywords - MCU18P10 MOSFET datasheet

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