STP36N06 Datasheet. Specs and Replacement

Type Designator: STP36N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 280 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO220

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STP36N06 substitution

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STP36N06 datasheet

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STP36N06

STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N06 60 V ... See More ⇒

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STP36N06

STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N05L 60 V ... See More ⇒

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STP36N06

STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N05L 50 V ... See More ⇒

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STP36N06

STP36N05L STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP36N05L 50 V ... See More ⇒

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Detailed specifications: STP32N05L, STP32N05LFI, STP32N06L, STP32N06LFI, STP33N10, STP33N10FI, STP36N05L, STP36N05LFI, 2N60, STP36N06FI, STP36N06L, STP36N06LFI, STP38N06, STP3N100, STP3N100FI, STP3N100XI, STP3N50XI

Keywords - STP36N06 MOSFET specs

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