All MOSFET. SI1012 Datasheet

 

SI1012 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI1012
   Marking Code: C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 750 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT523

 SI1012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI1012 Datasheet (PDF)

 ..1. Size:869K  mcc
 si1012.pdf

SI1012 SI1012

SI1012Features Low Threshold ESD Protected Gate Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55C to

 0.1. Size:154K  vishay
 si1012cr.pdf

SI1012 SI1012

Si1012CRVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.2 V RatedVDS (V) RDS(on) () ID (mA) Qg (Typ.) 100 % Rg Tested0.396 at VGS = 4.5 V 600 Gate-Source ESD Protected: 1000 V Material categorization:0.456 at VGS = 2.5 V 500For definitions of compliance please see20 0.750.546 at VGS = 1.8 V 350www.vis

 0.2. Size:175K  vishay
 si1012r-x.pdf

SI1012 SI1012

Si1012R/XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V0.85 at VGS = 2.5 V 20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7

 0.3. Size:230K  vishay
 si1012r si1012x.pdf

SI1012 SI1012

Si1012R, Si1012XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.8 V RatedVDS (V) RDS(on) ()ID (mA) Gate-Source ESD Protected: 2000 V0.70 at VGS = 4.5 V 600 High-Side Switching0.85 at VGS = 2.5 V Low On-Resistance: 0.7 20 500 Low Threshold: 0.8 V (typ.)1.25 at VGS = 1.8 V 350 Fast Switc

 0.4. Size:477K  lrc
 lsi1012lt1g s-lsi1012lt1g.pdf

SI1012 SI1012

LESHAN RADIO COMPANY, LTD.LSI1012LT1GN-Channel 1.8-V (G-S) MOSFETS-LSI1012LT1GFEATURES3D TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD ProtectedD High-Side Switching1D Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)2D Fast Switching Speed: 10 nsD S- Prefix for Automotive and Other Applications Requiring SOT-23Unique Site and Control Change Requiremen

 0.5. Size:248K  lrc
 lsi1012xt1g.pdf

SI1012 SI1012

LESHAN RADIO COMPANY, LTD.N-Channel 1.8-V (G-S) MOSFETLSI1012XT1GFEATURESD TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD Protected: 2000 VD High-Side SwitchingD Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 10 nsSC-89BENEFITSD Ease in Driving SwitchesD Low Offset (Error) VoltageGate 1D Low-Voltage OperationD High-Speed Circui

 0.6. Size:364K  cn tech public
 si1012cr.pdf

SI1012 SI1012

WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWwww.techpublic.com.tw

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: PHD37N06LT | PHB3N60E

 

 
Back to Top