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SI2101 Specs and Replacement

Type Designator: SI2101

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT323

SI2101 substitution

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SI2101 datasheet

 ..1. Size:1059K  mcc
 si2101.pdf pdf_icon

SI2101

SI2101 Features Leading Trench Technology for Low RDS(on) High Speed Switching Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction ... See More ⇒

Detailed specifications: MCU20N15, MCU20P10, MCU40N10, MCU60N04A, MCU80N06A, MSJAC11N65Y, MSJU11N65, SI1012, IRFB3607, SI2310A, SI2310B, SI2312B, SI2324A, SI3134KDW, SI3134KL3, SI3139KE, SI3139KL3

Keywords - SI2101 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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