All MOSFET. SI2101 Datasheet

 

SI2101 Datasheet and Replacement


   Type Designator: SI2101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT323
 

 SI2101 substitution

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SI2101 Datasheet (PDF)

 ..1. Size:1059K  mcc
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SI2101

SI2101Features Leading Trench Technology for Low RDS(on) High Speed Switching Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction

Datasheet: MCU20N15 , MCU20P10 , MCU40N10 , MCU60N04A , MCU80N06A , MSJAC11N65Y , MSJU11N65 , SI1012 , AON7506 , SI2310A , SI2310B , SI2312B , SI2324A , SI3134KDW , SI3134KL3 , SI3139KE , SI3139KL3 .

History: STU2240NL | CEP07N65A | IPB60R210CFD7 | BRCS040N02DP

Keywords - SI2101 MOSFET datasheet

 SI2101 cross reference
 SI2101 equivalent finder
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