SIL3400A
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIL3400A
Marking Code: 3400A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 5.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.8
nC
trⓘ - Rise Time: 7(max)
nS
Cossⓘ -
Output Capacitance: 108
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
SOT23-6L
SIL3400A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIL3400A
Datasheet (PDF)
..1. Size:496K mcc
sil3400a.pdf
SIL3400AFeatures High Density Cell Design For Low RDS(ON) Exceptional On-Resistance and Maximum DC Current Capability Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSMOSFETCompliant. See Ordering Information)
9.1. Size:935K mcc
sil3415.pdf
SIL3415Features Excellent RDS(ON) Low Gate Charge,Low Gate Voltages Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"P-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Ran
9.2. Size:551K mcc
sil3439k.pdf
SIL3439KFeatures Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected up to 3KV (HBM)Dual Epoxy Meets UL 94 V-0 Flammability RatingN&P-Channel Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maxim
Datasheet: AM3401
, AM3402N
, AM3403P
, AM3405P
, AM3406
, AM3406N
, AM3407
, AM3407PE
, SKD502T
, AM3412N
, AM3413
, AM3413P
, AM3415
, AM3415A
, AM3416
, AM3422
, AM3423P
.