SIL3724 Datasheet and Replacement
Type Designator: SIL3724
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.1 nS
Cossⓘ - Output Capacitance: 118 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23-6L
SIL3724 substitution
SIL3724 Datasheet (PDF)
sil3724.pdf

SIL3724Features High Density Cell Design for Low RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Dual Halogen Free Available Upon Request By Adding Suffix "-HF"N&P-Channel Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Rang
Datasheet: SIL2300 , SIL2301 , SIL2308 , SIL2322A , SIL2623 , SIL3400A , SIL3415 , SIL3439K , IRF830 , P1025HDB , P1825HDB , PA910BD , PK501BA , PK537BA , PK650DY , PKCH2BB , BSS123LT1G .
History: MCH3375 | BUK114-50L-S | SSW80R240SFD | 4835 | AP9564GM-HF | 2SK1347 | SVF31N30CSTR
Keywords - SIL3724 MOSFET datasheet
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SIL3724 substitution
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History: MCH3375 | BUK114-50L-S | SSW80R240SFD | 4835 | AP9564GM-HF | 2SK1347 | SVF31N30CSTR



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