PK501BA Specs and Replacement
Type Designator: PK501BA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 452 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PDFN5X6P
PK501BA substitution
PK501BA Specs
pk501ba.pdf
P-Channel Logic Level Enhancement Mode PK501BA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D -30V 7m -43A G Features Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒
pk501ba.pdf
P-Channel Logic Level Enhancement Mode PK501BA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D -30V 7m -43A G Features Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ... See More ⇒
Detailed specifications: SIL2623 , SIL3400A , SIL3415 , SIL3439K , SIL3724 , P1025HDB , P1825HDB , PA910BD , AO3400A , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , BVSS123LT1G , EFC2J004NUZ , EFC2J013NUZ , EFC2K101NUZ .
Keywords - PK501BA MOSFET specs
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