All MOSFET. PK501BA Datasheet

 

PK501BA Datasheet and Replacement


   Type Designator: PK501BA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 452 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: PDFN5X6P
 

 PK501BA substitution

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PK501BA Datasheet (PDF)

 ..1. Size:211K  1
 pk501ba.pdf pdf_icon

PK501BA

P-Channel Logic Level Enhancement Mode PK501BANIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID D-30V 7m -43A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

 ..2. Size:211K  niko-sem
 pk501ba.pdf pdf_icon

PK501BA

P-Channel Logic Level Enhancement Mode PK501BANIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID D-30V 7m -43A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses.

Datasheet: SIL2623 , SIL3400A , SIL3415 , SIL3439K , SIL3724 , P1025HDB , P1825HDB , PA910BD , RU6888R , PK537BA , PK650DY , PKCH2BB , BSS123LT1G , BVSS123LT1G , EFC2J004NUZ , EFC2J013NUZ , EFC2K101NUZ .

History: FDD8882 | IXFX100N65X2 | HFD5N50U

Keywords - PK501BA MOSFET datasheet

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