FCB125N65S3 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCB125N65S3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 181 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 46 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: TO263
FCB125N65S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCB125N65S3 Datasheet (PDF)
fcb125n65s3.pdf
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MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 24 A, 125 mWFCB125N65S3DescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored
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History: NCE60N390D