FCB125N65S3 PDF and Equivalents Search

 

FCB125N65S3 Specs and Replacement

Type Designator: FCB125N65S3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 181 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO263

FCB125N65S3 substitution

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FCB125N65S3 datasheet

 ..1. Size:326K  onsemi
 fcb125n65s3.pdf pdf_icon

FCB125N65S3

MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW FCB125N65S3 Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored... See More ⇒

Detailed specifications: EFC2K107NUZ, EFC3C001NUZ, EFC4C002NL, EFC4K105NUZ, EFC4K110NUZ, EFC8811R, FCB070N65S3, FCB099N65S3, 60N06, FCB260N65S3, FCD360N65S3R0, FCD600N65S3R0, FCH023N65S3, FCH041N65F-F085, FCH072N60F-F085, FCH077N65F-F085, FCH104N60F-F085

Keywords - FCB125N65S3 MOSFET specs

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