FCH125N65S3R0 MOSFET Datasheet: N-Ch, 650V, 24A. Full specification with pinout and replacement list

FCH125N65S3R0 Specs and Replacement

Type Designator: FCH125N65S3R0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 181 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO247

FCH125N65S3R0 substitution

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FCH125N65S3R0 datasheet

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FCH125N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailor... See More ⇒

Detailed specifications: FCB260N65S3, FCD360N65S3R0, FCD600N65S3R0, FCH023N65S3, FCH041N65F-F085, FCH072N60F-F085, FCH077N65F-F085, FCH104N60F-F085, IRF540N, FCHD040N65S3, FCHD125N65S3R0, FCHD190N65S3R0, FCMT099N65S3, FCMT125N65S3, FCMT180N65S3, FCMT250N65S3, FCP125N65S3R0