All MOSFET. FCH125N65S3R0 Datasheet

 

FCH125N65S3R0 Datasheet and Replacement


   Type Designator: FCH125N65S3R0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 181 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO247
 

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FCH125N65S3R0 Datasheet (PDF)

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FCH125N65S3R0

FCH125N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 24 A, 125 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor

Datasheet: FCB260N65S3 , FCD360N65S3R0 , FCD600N65S3R0 , FCH023N65S3 , FCH041N65F-F085 , FCH072N60F-F085 , FCH077N65F-F085 , FCH104N60F-F085 , IRF540 , FCHD040N65S3 , FCHD125N65S3R0 , FCHD190N65S3R0 , FCMT099N65S3 , FCMT125N65S3 , FCMT180N65S3 , FCMT250N65S3 , FCP125N65S3R0 .

History: AOD208 | UPA2719GR

Keywords - FCH125N65S3R0 MOSFET datasheet

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