FCPF360N65S3R0L MOSFET. Datasheet pdf. Equivalent
Type Designator: FCPF360N65S3R0L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220F
FCPF360N65S3R0L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCPF360N65S3R0L Datasheet (PDF)
fcpf360n65s3r0l.pdf
FCPF360N65S3R0LPower MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 10 A, 360 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(
fcpf36n60n.pdf
December 2013FCP36N60N / FCPF36N60NTN-Channel SupreMOS MOSFET600 V, 36 A, 90 mFeatures Description RDS(on) = 81 m (Typ.) @ VGS = 10 V, ID = 18 A The SupreMOS MOSFET is Fairchild Semiconductors nextgeneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC)employing a deep trench filling process that differentiates it from
fcp36n60n fcpf36n60nt.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
