All MOSFET. FCU360N65S3R0 Datasheet

 

FCU360N65S3R0 Datasheet and Replacement


   Type Designator: FCU360N65S3R0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: IPAK
 

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FCU360N65S3R0 Datasheet (PDF)

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FCU360N65S3R0

FCU360N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 10 A, 360 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor

Datasheet: FCPF190N65S3L1 , FCPF190N65S3R0L , FCPF250N65S3R0L , FCPF360N65S3R0L , FCPF36N60NT , FCPF380N60_F152 , FCPF600N60ZL1 , FCPF600N65S3R0L , K4145 , FCU600N65S3R0 , FDB0105N407L , FDB0165N807L , FDB0170N607L , FDB0190N807L , FDB0260N1007L , FDB0300N1007L , FDB045AN08A0-F085 .

History: FHF2N65D | IPI120N10S4-03

Keywords - FCU360N65S3R0 MOSFET datasheet

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