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FCU360N65S3R0 Specs and Replacement

Type Designator: FCU360N65S3R0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: IPAK

FCU360N65S3R0 substitution

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FCU360N65S3R0 datasheet

 ..1. Size:357K  onsemi
 fcu360n65s3r0.pdf pdf_icon

FCU360N65S3R0

FCU360N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailor... See More ⇒

Detailed specifications: FCPF190N65S3L1, FCPF190N65S3R0L, FCPF250N65S3R0L, FCPF360N65S3R0L, FCPF36N60NT, FCPF380N60_F152, FCPF600N60ZL1, FCPF600N65S3R0L, 2N7002, FCU600N65S3R0, FDB0105N407L, FDB0165N807L, FDB0170N607L, FDB0190N807L, FDB0260N1007L, FDB0300N1007L, FDB045AN08A0-F085

Keywords - FCU360N65S3R0 MOSFET specs

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