FCU360N65S3R0 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCU360N65S3R0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: IPAK
FCU360N65S3R0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCU360N65S3R0 Datasheet (PDF)
..1. Size:357K onsemi
fcu360n65s3r0.pdf
fcu360n65s3r0.pdf
FCU360N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 10 A, 360 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor
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