FDB0165N807L MOSFET Datasheet: N-Ch, 80V, 310A. Full specification with pinout and replacement list

FDB0165N807L Specs and Replacement

   Type Designator: FDB0165N807L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 310 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 104 nS
   Cossⓘ - Output Capacitance: 2350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: D2-PAK-7L

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FDB0165N807L datasheet

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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December 2010 FDB016N04AL7 N-Channel PowerTrench MOSFET 40V, 306A, 1.6mW Features Description RDS(on) = 1.16mW ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s adcanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet Low Gate Charge maintain superio... See More ⇒

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