STP3N80XI MOSFET: N-Ch, 800V, 1.7A. Full specification with pinout and replacement list

STP3N80XI Spec and Replacement

   Type Designator: STP3N80XI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: ISOWATT221

STP3N80XI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STP3N80XI Specs

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Detailed specifications: STP36N06LFI , STP38N06 , STP3N100 , STP3N100FI , STP3N100XI , STP3N50XI , STP3N60FI , STP3N60XI , IRF830 , STP3N90 , STP3N90FI , STP3NA50FI , STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , STP40N10 .