FDB9403L-F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB9403L-F085
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 110 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 186 nC
trⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 4300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
Package: TO263
FDB9403L-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB9403L-F085 Datasheet (PDF)
fdb9403l-f085.pdf
FDB9403L-F085N-Channel Logic Level PowerTrench MOSFET DD40 V, 110 A, 1.2 mFeatures Typical RDS(on) = 1.0 m at VGS = 10V, ID = 80 AG Typical Qg(tot) = 186 nC at VGS = 10V, ID = 80 AGS UIS CapabilityTO-263 RoHS CompliantSFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integr
fdb9403l.pdf
isc N-Channel MOSFET Transistor FDB9403LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
fdb9403 f085.pdf
Aug2012FDB9403_F085N-Channel Power Trench MOSFET40V, 110A, 1.2mDDFeatures Typ rDS(on) = 1m at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263ABSFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering
fdb9403-f085.pdf
FDB9403-F085N-Channel Power Trench MOSFET DD40V, 110A, 1.2m Features Typ rDS(on) = 1m at VGS = 10V, ID = 80AG Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AGS UIS CapabilityTO-263ABS RoHS CompliantFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrate
fdb9403.pdf
isc N-Channel MOSFET Transistor FDB9403FEATURESDrain Current : I =93A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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