FDB9403L-F085N-Channel Logic Level PowerTrench MOSFET DD40 V, 110 A, 1.2 mFeatures Typical RDS(on) = 1.0 m at VGS = 10V, ID = 80 AG Typical Qg(tot) = 186 nC at VGS = 10V, ID = 80 AGS UIS CapabilityTO-263 RoHS CompliantSFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integr

isc N-Channel MOSFET Transistor FDB9403LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Aug2012FDB9403_F085N-Channel Power Trench MOSFET40V, 110A, 1.2mDDFeatures Typ rDS(on) = 1m at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263ABSFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering

FDB9403-F085N-Channel Power Trench MOSFET DD40V, 110A, 1.2m Features Typ rDS(on) = 1m at VGS = 10V, ID = 80AG Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AGS UIS CapabilityTO-263ABS RoHS CompliantFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrate

isc N-Channel MOSFET Transistor FDB9403FEATURESDrain Current : I =93A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d