FDBL86063-F085 PDF and Equivalents Search

 

FDBL86063-F085 Specs and Replacement

Type Designator: FDBL86063-F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 357 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 3220 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: MO-299A

FDBL86063-F085 substitution

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FDBL86063-F085 datasheet

 ..1. Size:684K  onsemi
fdbl86063-f085.pdf pdf_icon

FDBL86063-F085

FDBL86063-F085 N-Channel Power Trench MOSFET 100 V, 240 A, 2.6 m Features Typical RDS(on) = 2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 73 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integr... See More ⇒

 5.1. Size:462K  onsemi
fdbl86063.pdf pdf_icon

FDBL86063-F085

MOSFET - POWERTRENCH), N-Channel 100 V, 240 A, 2.6 mW FDBL86063 Features Typical RDS(on) = 2 mW at VGS = 10 V, ID = 80 A www.onsemi.com Typical Qg(tot) = 73 nC at VGS = 10 V, ID = 80 A UIS Capability This Device is Pb-Free and is RoHS Compliant Typical Applications Industrial Battery Switch Primary Switch for 12 V Systems H-PSOF8L 11.68x9.80 CASE 100CU MAR... See More ⇒

 6.1. Size:280K  onsemi
fdbl86066-f085.pdf pdf_icon

FDBL86063-F085

FDBL86066-F085 N Channel POWERTRENCH) MOSFET 100 V, 240 A, 4.1 mW Features www.onsemi.com Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 47 nC at VGS = 10 V, ID = 80 A UIS Capability VDSS RDS(ON) MAX ID MAX Qualified to AEC Q101 100 V 4.1 mW @ 10 V 240 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant D Application... See More ⇒

 6.2. Size:501K  onsemi
fdbl86062-f085.pdf pdf_icon

FDBL86063-F085

FDBL86062-F085 N-Channel POWERTRENCH) MOSFET 100 V, 300 A, 2.0 mW www.onsemi.com Features Typical RDS(on) = 1.5 mW at VGS = 10 V, ID = 80 A D Typical Qg(tot) = 95 nC at VGS = 10 V, ID = 80 A UIS Capability Qualified to AEC Q101 G This Device is Pb-Free and is RoHS Compliant Applications S Automotive Engine Control PowerTrain Management Solenoid a... See More ⇒

Detailed specifications: FDB9503L-F085 , FDB9506L-F085 , FDB9509L-F085 , FDBL0200N100 , FDBL0240N100 , FDBL0260N100 , FDBL86062-F085 , FDBL86063 , IRFZ24N , FDBL86066-F085 , FDBL86210-F085 , FDBL86361-F085 , FDBL86363-F085 , FDBL86366-F085 , FDBL86561-F085 , FDBL86563-F085 , FDBL86566-F085 .

History: FDB9503L-F085

Keywords - FDBL86063-F085 MOSFET specs

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