All MOSFET. FDD6N50TM-F085 Datasheet

 

FDD6N50TM-F085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD6N50TM-F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.8 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO252

 FDD6N50TM-F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD6N50TM-F085 Datasheet (PDF)

 ..1. Size:1067K  onsemi
 fdd6n50tm-f085.pdf

FDD6N50TM-F085 FDD6N50TM-F085

FDD6N50TM-F085 500V N-Channel MOSFETDescriptionThese N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's Featuresproprietary, planar stripe, DMOS technology. 6A, 500V, RDS(on) = 0.9 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 12.8 nC)minimize on-state resistance, provide s

 5.1. Size:941K  fairchild semi
 fdd6n50tm f085.pdf

FDD6N50TM-F085 FDD6N50TM-F085

November 2010FDD6N50TM_F085500V N-Channel MOSFETFeatures Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailored to

 5.2. Size:458K  fairchild semi
 fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf

FDD6N50TM-F085 FDD6N50TM-F085

November 2013FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mFeatures Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p

 5.3. Size:288K  inchange semiconductor
 fdd6n50tm.pdf

FDD6N50TM-F085 FDD6N50TM-F085

isc N-Channel MOSFET Transistor FDD6N50TMFEATURESDrain Current : I =6A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.9(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFJ32N50Q

 

 
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