FDD6N50TM-F085 Specs and Replacement

Type Designator: FDD6N50TM-F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

FDD6N50TM-F085 substitution

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FDD6N50TM-F085 datasheet

 ..1. Size:1067K  onsemi
 fdd6n50tm-f085.pdf pdf_icon

FDD6N50TM-F085

FDD6N50TM-F085 500V N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's Features proprietary, planar stripe, DMOS technology. 6A, 500V, RDS(on) = 0.9 @VGS = 10 V This advanced technology has been especially tailored to Low gate charge ( typical 12.8 nC) minimize on-state resistance, provide s... See More ⇒

 5.1. Size:941K  fairchild semi
 fdd6n50tm f085.pdf pdf_icon

FDD6N50TM-F085

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 5.2. Size:458K  fairchild semi
 fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf pdf_icon

FDD6N50TM-F085

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p... See More ⇒

 5.3. Size:288K  inchange semiconductor
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FDD6N50TM-F085

isc N-Channel MOSFET Transistor FDD6N50TM FEATURES Drain Current I =6A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R =0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

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Detailed specifications: FDD26AN06A0_F085, FDD3672_F085, FDD3682-F085, FDD4141-F085, FDD4243-F085, FDD4685-F085, FDD5810-F085, FDD5N50FTM-WS, IRF840, FDD8444L-F085, FDD8447L_F085, FDD8453LZ-F085, FDD86250_F085, FDD86367, FDD86367-F085, FDD86369, FDD86369-F085

Keywords - FDD6N50TM-F085 MOSFET specs

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