FDD6N50TM-F085 - аналоги, даташиты, параметры транзистора

FDD6N50TM-F085 Datasheet (PDF)

..1. Size:1067K onsemi
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FDD6N50TM-F085 500V N-Channel MOSFETDescriptionThese N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's Featuresproprietary, planar stripe, DMOS technology. 6A, 500V, RDS(on) = 0.9 @VGS = 10 VThis advanced technology has been especially tailored to Low gate charge ( typical 12.8 nC)minimize on-state resistance, provide s

5.1. Size:941K fairchild semi
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November 2010FDD6N50TM_F085500V N-Channel MOSFETFeatures Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailored to

5.2. Size:458K fairchild semi
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November 2013FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mFeatures Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p

5.3. Size:288K inchange semiconductor
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isc N-Channel MOSFET Transistor FDD6N50TMFEATURESDrain Current : I =6A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.9(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... FDD26AN06A0_F085 , FDD3672_F085 , FDD3682-F085 , FDD4141-F085 , FDD4243-F085 , FDD4685-F085 , FDD5810-F085 , FDD5N50FTM-WS , IRF840 , FDD8444L-F085 , FDD8447L_F085 , FDD8453LZ-F085 , FDD86250_F085 , FDD86367 , FDD86367-F085 , FDD86369 , FDD86369-F085 .