STP40N10 Datasheet. Specs and Replacement

Type Designator: STP40N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO220

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STP40N10 substitution

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STP40N10 datasheet

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STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in I PAK and TO-220 packages Datasheet - production data Features TAB TAB Order code V R max. I DS DS(on) D STI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 2 3 2 1 Excellent output capacitance (COSS) profile 1 I PAK TO-220 100% avalanche tested ... See More ⇒

Detailed specifications: STP3N80XI, STP3N90, STP3N90FI, STP3NA50FI, STP3NA80, STP3NA80FI, STP40N05, STP40N05FI, MMIS60R580P, STP40N10FI, STP4N100, STP4N100FI, STP4N100XI, STP4N40, STP4N40FI, STP4N80XI, STP4N90

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