All MOSFET. STP40N10 Datasheet

 

STP40N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO220

 STP40N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP40N10 Datasheet (PDF)

Datasheet: STP3N80XI , STP3N90 , STP3N90FI , STP3NA50FI , STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , IRF1405 , STP40N10FI , STP4N100 , STP4N100FI , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 .

 

 
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