FDMD8530 Datasheet and Replacement
Type Designator: FDMD8530
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 201 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 106 nC
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 2190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
Package: POWER5X6
FDMD8530 substitution
FDMD8530 Datasheet (PDF)
fdmd8530.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmd85100.pdf

March 2015FDMD85100Dual N-Channel PowerTrench MOSFETQ1: 100 V, 48A, 9.9 m Q2: 100 V, 48A, 9.9 mFeatures General DescriptionQ1: N-ChannelThis device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 Ainternally connected for half/full bridge, low source inductance Max rDS(on
fdmd8560l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmd8540l.pdf

MOSFET Dual, N-Channel,POWERTRENCH)Q1: 40 V, 156 A, 1.5 mWQ2: 40 V, 156 A, 1.5 mWFDMD8540Lwww.onsemi.comGeneral DescriptionThis device includes two 40 V N-Channel MOSFETs in a dualVDS rDS(ON) MAX ID MAXPower (5 mm x 6 mm) package. HS source and LS drain internallyconnected for half/full bridge, low source inductance package, low40 V 1.5 mW @ 10 V 156 ArDS(on)/Qg FOM
Datasheet: FDD9411L-F085 , FDD9507L-F085 , FDD9509L-F085 , FDD9510L-F085 , FDD9511L-F085 , FDG6332C-F085 , FDMC010N08C , FDMC8010DC , 12N60 , FDMD8540L , FDMD8560L , 2N7002NXAK , 2N7002NXBK , BUK6D120-40E , BUK6D120-60P , BUK6D125-60E , BUK6D210-60E .
Keywords - FDMD8530 MOSFET datasheet
FDMD8530 cross reference
FDMD8530 equivalent finder
FDMD8530 lookup
FDMD8530 substitution
FDMD8530 replacement



LIST
Last Update
MOSFET: DSE022N10N3 | DSE012N04NA | DHSJ25N65F | DHSJ21N65Z | DHSJ21N65W | DHSJ17N65 | DHSJ13N65 | DHSJ11N65 | DHS065N85P | DHS065N85I | DHS065N85F | DHS065N85E | DHS065N85D | DHS065N85B | DHS065N85 | DHS065N10P
Popular searches
ksc1845 transistor | irf630 datasheet | mpsa13 equivalent | c5198 | 2sc1969 transistor | bcy21 | s8550 datasheet | mj50ac100