FDMD8530 Specs and Replacement
Type Designator: FDMD8530
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 201 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 2190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
Package: POWER5X6
FDMD8530 substitution
- MOSFET ⓘ Cross-Reference Search
FDMD8530 datasheet
fdmd8530.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdmd85100.pdf
March 2015 FDMD85100 Dual N-Channel PowerTrench MOSFET Q1 100 V, 48A, 9.9 m Q2 100 V, 48A, 9.9 m Features General Description Q1 N-Channel This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 A internally connected for half/full bridge, low source inductance Max rDS(on... See More ⇒
fdmd8560l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdmd8540l.pdf
MOSFET Dual, N-Channel, POWERTRENCH) Q1 40 V, 156 A, 1.5 mW Q2 40 V, 156 A, 1.5 mW FDMD8540L www.onsemi.com General Description This device includes two 40 V N-Channel MOSFETs in a dual VDS rDS(ON) MAX ID MAX Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low 40 V 1.5 mW @ 10 V 156 A rDS(on)/Qg FOM ... See More ⇒
Detailed specifications: FDD9411L-F085 , FDD9507L-F085 , FDD9509L-F085 , FDD9510L-F085 , FDD9511L-F085 , FDG6332C-F085 , FDMC010N08C , FDMC8010DC , 2N7002 , FDMD8540L , FDMD8560L , 2N7002NXAK , 2N7002NXBK , BUK6D120-40E , BUK6D120-60P , BUK6D125-60E , BUK6D210-60E .
Keywords - FDMD8530 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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