FDMD8530. Аналоги и основные параметры
Наименование производителя: FDMD8530
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 78 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 201 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 2190 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00125 Ohm
Тип корпуса: POWER5X6
Аналог (замена) для FDMD8530
- подборⓘ MOSFET транзистора по параметрам
FDMD8530 даташит
fdmd8530.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmd85100.pdf
March 2015 FDMD85100 Dual N-Channel PowerTrench MOSFET Q1 100 V, 48A, 9.9 m Q2 100 V, 48A, 9.9 m Features General Description Q1 N-Channel This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 A internally connected for half/full bridge, low source inductance Max rDS(on
fdmd8560l.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdmd8540l.pdf
MOSFET Dual, N-Channel, POWERTRENCH) Q1 40 V, 156 A, 1.5 mW Q2 40 V, 156 A, 1.5 mW FDMD8540L www.onsemi.com General Description This device includes two 40 V N-Channel MOSFETs in a dual VDS rDS(ON) MAX ID MAX Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low 40 V 1.5 mW @ 10 V 156 A rDS(on)/Qg FOM
Другие IGBT... FDD9411L-F085, FDD9507L-F085, FDD9509L-F085, FDD9510L-F085, FDD9511L-F085, FDG6332C-F085, FDMC010N08C, FDMC8010DC, 2N7002, FDMD8540L, FDMD8560L, 2N7002NXAK, 2N7002NXBK, BUK6D120-40E, BUK6D120-60P, BUK6D125-60E, BUK6D210-60E
History: FDMD8560L
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Список транзисторов
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