Справочник MOSFET. FDMD8530

 

FDMD8530 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMD8530
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 201 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 2190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00125 Ohm
   Тип корпуса: POWER5X6
     - подбор MOSFET транзистора по параметрам

 

FDMD8530 Datasheet (PDF)

 ..1. Size:706K  onsemi
fdmd8530.pdfpdf_icon

FDMD8530

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:676K  fairchild semi
fdmd85100.pdfpdf_icon

FDMD8530

March 2015FDMD85100Dual N-Channel PowerTrench MOSFETQ1: 100 V, 48A, 9.9 m Q2: 100 V, 48A, 9.9 mFeatures General DescriptionQ1: N-ChannelThis device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 Ainternally connected for half/full bridge, low source inductance Max rDS(on

 8.2. Size:688K  onsemi
fdmd8560l.pdfpdf_icon

FDMD8530

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:653K  onsemi
fdmd8540l.pdfpdf_icon

FDMD8530

MOSFET Dual, N-Channel,POWERTRENCH)Q1: 40 V, 156 A, 1.5 mWQ2: 40 V, 156 A, 1.5 mWFDMD8540Lwww.onsemi.comGeneral DescriptionThis device includes two 40 V N-Channel MOSFETs in a dualVDS rDS(ON) MAX ID MAXPower (5 mm x 6 mm) package. HS source and LS drain internallyconnected for half/full bridge, low source inductance package, low40 V 1.5 mW @ 10 V 156 ArDS(on)/Qg FOM

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CET04N10 | H5N2004DS | DMP22M2UPS-13 | STD3N30T4

 

 
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