All MOSFET. STP40N10FI Datasheet

 

STP40N10FI Datasheet and Replacement


   Type Designator: STP40N10FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: ISOWATT220
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STP40N10FI Datasheet (PDF)

 ..1. Size:336K  st
stp40n10 stp40n10fi.pdf pdf_icon

STP40N10FI

 8.1. Size:108K  st
stp40n03l-20.pdf pdf_icon

STP40N10FI

STP40N03L-20N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP40N03L-20 30 V

 8.2. Size:239K  st
stp40nf10l.pdf pdf_icon

STP40N10FI

STP40NF10LN-channel 100V - 0.028 - 40A TO-220Low gate charge STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP40NF10L 100V

 8.3. Size:440K  st
sti40n65m2 stp40n65m2.pdf pdf_icon

STP40N10FI

STI40N65M2, STP40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in IPAK and TO-220 packages Datasheet - production data Features TAB TABOrder code V R max. I DS DS(on) DSTI40N65M2 650 V 0.099 32 A STP40N65M2 3 Extremely low gate charge 232 1 Excellent output capacitance (COSS) profile 1IPAK TO-220 100% avalanche tested

Datasheet: STP3N90 , STP3N90FI , STP3NA50FI , STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , STP40N10 , CEP83A3 , STP4N100 , STP4N100FI , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI .

History: FCPF7N60YDTU | SM6A12NSFP | AP6679GI-HF | SPD04N60S5

Keywords - STP40N10FI MOSFET datasheet

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