BUK7K134-100E
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7K134-100E
Marking Code: 713410E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 32
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 9.8
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 10.5
nC
trⓘ - Rise Time: 5.5
nS
Cossⓘ -
Output Capacitance: 57
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.121
Ohm
Package: SOT1205
BUK7K134-100E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7K134-100E
Datasheet (PDF)
..1. Size:713K nxp
buk7k134-100e.pdf
BUK7K134-100EDual N-channel 100 V, 121 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
8.1. Size:255K nxp
buk7k17-80e.pdf
BUK7K17-80EDual N-channel 80 V, 17 m standard level MOSFET10 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
8.2. Size:253K nxp
buk7k15-80e.pdf
BUK7K15-80EDual N-channel 80 V, 15 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
8.3. Size:325K nxp
buk7k12-60e.pdf
BUK7K12-60EDual N-channel 60 V, 9.3 m standard level MOSFET11 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
8.4. Size:308K nxp
buk7k18-40e.pdf
BUK7K18-40EDual N-channel 40 V, 19 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
8.5. Size:336K nxp
buk7k17-60e.pdf
BUK7K17-60EDual N-channel 60 V, 14 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
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