BUK7K134-100E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK7K134-100E
Маркировка: 713410E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9.8 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 10.5 nC
trⓘ - Время нарастания: 5.5 ns
Cossⓘ - Выходная емкость: 57 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.121 Ohm
Тип корпуса: SOT1205
- подбор MOSFET транзистора по параметрам
BUK7K134-100E Datasheet (PDF)
buk7k134-100e.pdf

BUK7K134-100EDual N-channel 100 V, 121 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
buk7k17-80e.pdf

BUK7K17-80EDual N-channel 80 V, 17 m standard level MOSFET10 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
buk7k15-80e.pdf

BUK7K15-80EDual N-channel 80 V, 15 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
buk7k12-60e.pdf

BUK7K12-60EDual N-channel 60 V, 9.3 m standard level MOSFET11 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BUK9213-30A | SWP180N75A | CEF07N7 | BUK7M10-40E | SVG083R6NAL5 | CEB6060N
History: BUK9213-30A | SWP180N75A | CEF07N7 | BUK7M10-40E | SVG083R6NAL5 | CEB6060N



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sd1047 | 2n3035 | ksc1815 | bu406 | j201 datasheet | 2n5088 datasheet | irfp064n | tip31 transistor