STP4NA60 Datasheet. Specs and Replacement

Type Designator: STP4NA60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO220

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STP4NA60 substitution

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STP4NA60 datasheet

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STP4NA60

STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA60 600 V ... See More ⇒

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STP4NA60

STP4NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP4NA60FP 600 V ... See More ⇒

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STP4NA60

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V ... See More ⇒

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STP4NA60

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Detailed specifications: STP4N100, STP4N100FI, STP4N100XI, STP4N40, STP4N40FI, STP4N80XI, STP4N90, STP4N90FI, IRF840, STP4NA60FI, STP4NA80, STP4NA80FI, STP50N05L, STP50N05LFI, STP50N06, STP50N06FI, STP50N06L

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.