All MOSFET. STP4NA60 Datasheet

 

STP4NA60 Datasheet and Replacement


   Type Designator: STP4NA60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220
 

 STP4NA60 substitution

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STP4NA60 Datasheet (PDF)

 ..1. Size:405K  st
 stp4na60.pdf pdf_icon

STP4NA60

STP4NA60STP4NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA60 600 V

 0.1. Size:96K  st
 stp4na60fp.pdf pdf_icon

STP4NA60

STP4NA60FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP4NA60FP 600 V

 8.1. Size:383K  st
 stp4na80.pdf pdf_icon

STP4NA60

STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V

 8.2. Size:239K  st
 stp4na90 stp4na90fi.pdf pdf_icon

STP4NA60

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History: FDS6680A | BFC41

Keywords - STP4NA60 MOSFET datasheet

 STP4NA60 cross reference
 STP4NA60 equivalent finder
 STP4NA60 lookup
 STP4NA60 substitution
 STP4NA60 replacement

 

 
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