STP4NA60 MOSFET. Datasheet pdf. Equivalent
Type Designator: STP4NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO220
STP4NA60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP4NA60 Datasheet (PDF)
Datasheet: STP4N100 , STP4N100FI , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , 20N60 , STP4NA60FI , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI , STP50N06 , STP50N06FI , STP50N06L .
