All MOSFET. STP4NA60FI Datasheet

 

STP4NA60FI MOSFET. Datasheet pdf. Equivalent


   Type Designator: STP4NA60FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: ISOWATT220

 STP4NA60FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP4NA60FI Datasheet (PDF)

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