All MOSFET. STP4NA60FI Datasheet

 

STP4NA60FI Datasheet and Replacement


   Type Designator: STP4NA60FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: ISOWATT220
 

 STP4NA60FI substitution

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STP4NA60FI Datasheet (PDF)

 5.1. Size:96K  st
 stp4na60fp.pdf pdf_icon

STP4NA60FI

STP4NA60FPN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP4NA60FP 600 V

 6.1. Size:405K  st
 stp4na60.pdf pdf_icon

STP4NA60FI

STP4NA60STP4NA60FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA60 600 V

 8.1. Size:383K  st
 stp4na80.pdf pdf_icon

STP4NA60FI

STP4NA80STP4NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP4NA80 800 V

 8.2. Size:239K  st
 stp4na90 stp4na90fi.pdf pdf_icon

STP4NA60FI

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Datasheet: STP4N100FI , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , 20N60 , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI , STP50N06 , STP50N06FI , STP50N06L , STP50N06LFI .

Keywords - STP4NA60FI MOSFET datasheet

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