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STP4NA60FI Spec and Replacement


   Type Designator: STP4NA60FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: ISOWATT220

 STP4NA60FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP4NA60FI Specs

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 stp4na60fp.pdf pdf_icon

STP4NA60FI

STP4NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP4NA60FP 600 V ... See More ⇒

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 stp4na60.pdf pdf_icon

STP4NA60FI

STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA60 600 V ... See More ⇒

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 stp4na80.pdf pdf_icon

STP4NA60FI

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V ... See More ⇒

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 stp4na90 stp4na90fi.pdf pdf_icon

STP4NA60FI

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Detailed specifications: STP4N100FI , STP4N100XI , STP4N40 , STP4N40FI , STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , 20N60 , STP4NA80 , STP4NA80FI , STP50N05L , STP50N05LFI , STP50N06 , STP50N06FI , STP50N06L , STP50N06LFI .

Keywords - STP4NA60FI MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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