BUK9Y2R8-40H MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK9Y2R8-40H
Marking Code: 92H840
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 172 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.05 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 44 nC
trⓘ - Rise Time: 21.6 nS
Cossⓘ - Output Capacitance: 709 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: SOT669
BUK9Y2R8-40H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK9Y2R8-40H Datasheet (PDF)
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