Справочник MOSFET. BUK9Y2R8-40H

 

BUK9Y2R8-40H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK9Y2R8-40H
   Маркировка: 92H840
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 172 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
   Пороговое напряжение включения |Ugs(th)|: 2.05 V
   Максимально допустимый постоянный ток стока |Id|: 120 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 44 nC
   Время нарастания (tr): 21.6 ns
   Выходная емкость (Cd): 709 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0028 Ohm
   Тип корпуса: SOT669

 Аналог (замена) для BUK9Y2R8-40H

 

 

BUK9Y2R8-40H Datasheet (PDF)

 ..1. Size:262K  nxp
buk9y2r8-40h.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y2R8-40HN-channel 40 V, 2.8 m logic level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Featur

 7.1. Size:260K  nxp
buk9y2r4-40h.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y2R4-40HN-channel 40 V, 2.4 m logic level MOSFET in LFPAK564 June 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Featur

 8.1. Size:810K  nxp
buk9y22-30b.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y22-30BN-channel TrenchMOS logic level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

 8.2. Size:349K  nxp
buk9y25-80e.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y25-80EN-channel 80 V, 27 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.3. Size:311K  nxp
buk9y29-40e.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y29-40EN-channel 40 V, 29 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.4. Size:292K  nxp
buk9y21-40e.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y21-40EN-channel 40 V, 21 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.5. Size:348K  nxp
buk9y22-100e.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y22-100EN-channel 100 V, 22 m logic level MOSFET in LFPAK569 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive

 8.6. Size:309K  nxp
buk9y25-60e.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y25-60EN-channel 60 V, 25 m logic level MOSFET in LFPAK567 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a

 8.7. Size:812K  nxp
buk9y27-40b.pdf

BUK9Y2R8-40H BUK9Y2R8-40H

BUK9Y27-40BN-channel TrenchMOS logic level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

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