All MOSFET. NX3020NAKV Datasheet

 

NX3020NAKV Datasheet and Replacement


   Type Designator: NX3020NAKV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 2.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: SOT666
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NX3020NAKV Datasheet (PDF)

 ..1. Size:702K  nxp
nx3020nakv.pdf pdf_icon

NX3020NAKV

NX3020NAKV30 V, 200 mA dual N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flatlead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection

 5.1. Size:712K  nxp
nx3020nakw.pdf pdf_icon

NX3020NAKV

NX3020NAKW30 V, 180 mA N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltag

 5.2. Size:249K  nxp
nx3020nak.pdf pdf_icon

NX3020NAKV

NX3020NAK30 V, single N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold volt

 5.3. Size:715K  nxp
nx3020naks.pdf pdf_icon

NX3020NAKV

NX3020NAKS30 V, 180 mA dual N-channel Trench MOSFET11 November 2013 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SML30B48 | CS20N50ANH | DMNH10H028SCT | SWHA055R03VT | AOB260L | DMP1200UFR4 | IRLS4030

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