NX3020NAKV Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NX3020NAKV
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.26 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 2.6 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
Тип корпуса: SOT666
Аналог (замена) для NX3020NAKV
NX3020NAKV Datasheet (PDF)
nx3020nakv.pdf

NX3020NAKV30 V, 200 mA dual N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flatlead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection
nx3020nakw.pdf

NX3020NAKW30 V, 180 mA N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltag
nx3020nak.pdf

NX3020NAK30 V, single N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold volt
nx3020naks.pdf

NX3020NAKS30 V, 180 mA dual N-channel Trench MOSFET11 November 2013 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low
Другие MOSFET... NX138AK , NX138AKS , NX138BK , NX138BKS , NX138BKW , NX3008NBKMB , NX3008PBKMB , NX3020NAKS , IRLB4132 , NX3020NAKW , NX6020CAKS , NX7002AKA , NX7002BKH , PMCM4401UNE , PMCM4401UPE , PMCM4402UPE , PMCM6501UNE .
History: 2SK2323 | HGP115N15S | SI1410EDH | SPP17N80C3 | CM2N60C | P1004HV | SI1302DL
History: 2SK2323 | HGP115N15S | SI1410EDH | SPP17N80C3 | CM2N60C | P1004HV | SI1302DL



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