All MOSFET. NX7002BKH Datasheet

 

NX7002BKH Datasheet and Replacement


   Type Designator: NX7002BKH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 0.35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.55 nC
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 2.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: SOT8001
      - MOSFET Cross-Reference Search

 

NX7002BKH Datasheet (PDF)

 ..1. Size:269K  nxp
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NX7002BKH

NX7002BKH60 V, N-channel Trench MOSFET12 March 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology El

 6.1. Size:234K  nxp
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NX7002BKH

NX7002BKMB60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

 6.2. Size:263K  nxp
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NX7002BKH

NX7002BKW60 V, single N-channel Trench MOSFET20 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt

 6.3. Size:235K  nxp
nx7002bkm.pdf pdf_icon

NX7002BKH

NX7002BKM60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SFF70N10Z | SDU02N60

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