NX7002BKH
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NX7002BKH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.38
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.35
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 0.55
nC
trⓘ -
Время нарастания: 1
ns
Cossⓘ - Выходная емкость: 2.7
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.8
Ohm
Тип корпуса: SOT8001
Аналог (замена) для NX7002BKH
NX7002BKH
Datasheet (PDF)
..1. Size:269K nxp
nx7002bkh.pdf 
NX7002BKH60 V, N-channel Trench MOSFET12 March 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology El
6.1. Size:234K nxp
nx7002bkmb.pdf 
NX7002BKMB60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology
6.2. Size:263K nxp
nx7002bkw.pdf 
NX7002BKW60 V, single N-channel Trench MOSFET20 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt
6.3. Size:235K nxp
nx7002bkm.pdf 
NX7002BKM60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology
6.4. Size:294K nxp
nx7002bks.pdf 
NX7002BKS60 V, dual N-channel Trench MOSFET12 May 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroS
6.5. Size:257K nxp
nx7002bkxb.pdf 
NX7002BKXB60 V, dual N-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plast
6.6. Size:266K nxp
nx7002bk.pdf 
NX7002BK60 V, N-channel Trench MOSFET12 May 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharg
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