PMF250XNE Specs and Replacement
Type Designator: PMF250XNE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.275 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.254 Ohm
Package: SOT323
PMF250XNE substitution
- MOSFET ⓘ Cross-Reference Search
PMF250XNE datasheet
pmf250xne.pdf
PMF250XNE 30V N-channel Trench MOSFET 28 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch... See More ⇒
pmf250xn.pdf
PMF250XN 30 V, 0.9 A N-channel Trench MOSFET Rev. 1 7 December 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fas... See More ⇒
Detailed specifications: PMCM650CUNE, PMCM950ENE, PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2, PMDXB600UNEL, PMDXB950UPEL, IRF520, PMF63UNE, PMH1200UPE, PMH950UPE, PMN120ENE, PMN120ENEA, PMN16XNE, PMN20ENA, PMN230ENE
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