All MOSFET. PMF250XNE Datasheet

 

PMF250XNE Datasheet and Replacement


   Type Designator: PMF250XNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.275 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.254 Ohm
   Package: SOT323
 

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PMF250XNE Datasheet (PDF)

 ..1. Size:714K  nxp
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PMF250XNE

PMF250XNE30V N-channel Trench MOSFET28 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

 6.1. Size:870K  nxp
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PMF250XNE

PMF250XN30 V, 0.9 A N-channel Trench MOSFETRev. 1 7 December 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fas

Datasheet: PMCM650CUNE , PMCM950ENE , PMCXB1000UE , PMCXB900UEL , PMDPB56XNEA , PMDPB95XNE2 , PMDXB600UNEL , PMDXB950UPEL , CS150N03A8 , PMF63UNE , PMH1200UPE , PMH950UPE , PMN120ENE , PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE .

History: SVF2N65N | 2SK578 | TPCA8053-H | CS5N65A3 | TPCA8008-H | NCE70N900I | GSM6424

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