PMN120ENE Specs and Replacement

Type Designator: PMN120ENE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 24 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.123 Ohm

Package: TSOP6

PMN120ENE substitution

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PMN120ENE datasheet

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 pmn120ene.pdf pdf_icon

PMN120ENE

PMN120ENE 60 V, N-channel Trench MOSFET 14 December 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disc... See More ⇒

 0.1. Size:272K  nxp
 pmn120enea.pdf pdf_icon

PMN120ENE

PMN120ENEA 60 V, N-channel Trench MOSFET 29 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology ... See More ⇒

Detailed specifications: PMDPB56XNEA, PMDPB95XNE2, PMDXB600UNEL, PMDXB950UPEL, PMF250XNE, PMF63UNE, PMH1200UPE, PMH950UPE, 2N60, PMN120ENEA, PMN16XNE, PMN20ENA, PMN230ENE, PMN230ENEA, PMN25ENE, PMN25ENEA, PMN280ENEA

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