PMN120ENE Datasheet and Replacement
Type Designator: PMN120ENE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.123 Ohm
Package: TSOP6
PMN120ENE substitution
PMN120ENE Datasheet (PDF)
pmn120ene.pdf

PMN120ENE60 V, N-channel Trench MOSFET14 December 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Disc
pmn120enea.pdf

PMN120ENEA60 V, N-channel Trench MOSFET29 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology
Datasheet: PMDPB56XNEA , PMDPB95XNE2 , PMDXB600UNEL , PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE , PMH950UPE , IRF830 , PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA , PMN280ENEA .
History: NVMFS3D6N10MCL | 2SK2958
Keywords - PMN120ENE MOSFET datasheet
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History: NVMFS3D6N10MCL | 2SK2958



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