PMN16XNE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN16XNE
Marking Code: G7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 6.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 137 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TSOP6
PMN16XNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN16XNE Datasheet (PDF)
..1. Size:730K nxp
pmn16xne.pdf
pmn16xne.pdf
PMN16XNE20 V, N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa
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