PMN16XNE Specs and Replacement

Type Designator: PMN16XNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 137 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TSOP6

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PMN16XNE datasheet

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 pmn16xne.pdf pdf_icon

PMN16XNE

PMN16XNE 20 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa... See More ⇒

Detailed specifications: PMDXB600UNEL, PMDXB950UPEL, PMF250XNE, PMF63UNE, PMH1200UPE, PMH950UPE, PMN120ENE, PMN120ENEA, P60NF06, PMN20ENA, PMN230ENE, PMN230ENEA, PMN25ENE, PMN25ENEA, PMN280ENEA, PMN28UNE, PMN30ENEA

Keywords - PMN16XNE MOSFET specs

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