PMN16XNE Datasheet and Replacement
Type Designator: PMN16XNE
Marking Code: G7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 12 nC
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 137 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TSOP6
PMN16XNE substitution
PMN16XNE Datasheet (PDF)
pmn16xne.pdf

PMN16XNE20 V, N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipa
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRF624S
Keywords - PMN16XNE MOSFET datasheet
PMN16XNE cross reference
PMN16XNE equivalent finder
PMN16XNE lookup
PMN16XNE substitution
PMN16XNE replacement
History: IRF624S



LIST
Last Update
MOSFET: DSN108N20N | DSG270N12N3 | DSG140N12N3 | DSG108N20NA | DSG070N15NA | DSG070N10L3 | DSG059N15NA | DSG054N10N3 | DSG053N08N3 | DSG052N14N | DSG048N08N3 | DSG047N08N3 | DSG045N14N | DSG041N08NA | DSG030N10N3 | DSG028N10NA
Popular searches
2sb560 | tip31c transistor equivalent | 2sc1815 datasheet | mj15015 | 13003 transistor datasheet | 2n3416 | bdx53c | k3563