All MOSFET. PMN20ENA Datasheet

 

PMN20ENA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMN20ENA
   Marking Code: 3M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.652 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TSOP6

 PMN20ENA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMN20ENA Datasheet (PDF)

 ..1. Size:289K  nxp
 pmn20ena.pdf

PMN20ENA PMN20ENA

PMN20ENA40 V, N-channel Trench MOSFET30 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top