All MOSFET. PMN20ENA Datasheet

 

PMN20ENA Datasheet and Replacement


   Type Designator: PMN20ENA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.652 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TSOP6
 

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PMN20ENA Datasheet (PDF)

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PMN20ENA

PMN20ENA40 V, N-channel Trench MOSFET30 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE

Datasheet: PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE , PMH950UPE , PMN120ENE , PMN120ENEA , PMN16XNE , IRF520 , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA , PMN280ENEA , PMN28UNE , PMN30ENEA , PMN30UN .

History: IRHN9250 | CHM9433JGP | 2N7100 | APQ10SN65AH | CHM9926AJGP

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