PMN20ENA Specs and Replacement
Type Designator: PMN20ENA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.652 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 101 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TSOP6
PMN20ENA substitution
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PMN20ENA datasheet
pmn20ena.pdf
PMN20ENA 40 V, N-channel Trench MOSFET 30 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE... See More ⇒
Detailed specifications: PMDXB950UPEL, PMF250XNE, PMF63UNE, PMH1200UPE, PMH950UPE, PMN120ENE, PMN120ENEA, PMN16XNE, 75N75, PMN230ENE, PMN230ENEA, PMN25ENE, PMN25ENEA, PMN280ENEA, PMN28UNE, PMN30ENEA, PMN30UN
Keywords - PMN20ENA MOSFET specs
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