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STP50N05LFI Spec and Replacement


   Type Designator: STP50N05LFI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 550 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: ISOWATT220

 STP50N05LFI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STP50N05LFI Specs

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STP50N05LFI

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STP50N05LFI

STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06L 60 V ... See More ⇒

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STP50N05LFI

STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP50N06 60 V ... See More ⇒

 7.3. Size:396K  st
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STP50N05LFI

STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06 60 V ... See More ⇒

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Detailed specifications: STP4N80XI , STP4N90 , STP4N90FI , STP4NA60 , STP4NA60FI , STP4NA80 , STP4NA80FI , STP50N05L , IRFP460 , STP50N06 , STP50N06FI , STP50N06L , STP50N06LFI , STP53N05 , STP53N06 , STP55N05L , STP55N05LFI .

History: STP4NA60 | ZVN4206ASTZ

Keywords - STP50N05LFI MOSFET specs

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