STP50N05LFI Datasheet. Specs and Replacement

Type Designator: STP50N05LFI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 550 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: ISOWATT220

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STP50N05LFI substitution

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STP50N05LFI datasheet

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STP50N05LFI

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STP50N05LFI

STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP50N06 60 V ... See More ⇒

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Detailed specifications: STP4N80XI, STP4N90, STP4N90FI, STP4NA60, STP4NA60FI, STP4NA80, STP4NA80FI, STP50N05L, IRFP460, STP50N06, STP50N06FI, STP50N06L, STP50N06LFI, STP53N05, STP53N06, STP55N05L, STP55N05LFI

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