All MOSFET. PMN25ENE Datasheet

 

PMN25ENE Datasheet and Replacement


   Type Designator: PMN25ENE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TSOP6
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PMN25ENE Datasheet (PDF)

 ..1. Size:260K  nxp
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PMN25ENE

PMN25ENE30 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg

 0.1. Size:260K  nxp
 pmn25enea.pdf pdf_icon

PMN25ENE

PMN25ENEA30 V, N-channel Trench MOSFET14 March 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E

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History: CHM85A3PAGP | SML100L16 | SQ9407EY-T1 | ALD1103DB | TK7P65W | SFFX054Z

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