PMN25ENEA Datasheet and Replacement
Type Designator: PMN25ENEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.667 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TSOP6
PMN25ENEA substitution
PMN25ENEA Datasheet (PDF)
pmn25enea.pdf

PMN25ENEA30 V, N-channel Trench MOSFET14 March 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E
pmn25ene.pdf

PMN25ENE30 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg
Datasheet: PMH950UPE , PMN120ENE , PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , NCEP15T14 , PMN280ENEA , PMN28UNE , PMN30ENEA , PMN30UN , PMN30UNE , PMN30XP , PMN30XPE , PMN40ENA .
History: 25N10G-TM3-T | APT4080BN
Keywords - PMN25ENEA MOSFET datasheet
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PMN25ENEA substitution
PMN25ENEA replacement
History: 25N10G-TM3-T | APT4080BN



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