PMN25ENEA Specs and Replacement
Type Designator: PMN25ENEA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.667 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TSOP6
PMN25ENEA substitution
- MOSFET ⓘ Cross-Reference Search
PMN25ENEA datasheet
pmn25enea.pdf
PMN25ENEA 30 V, N-channel Trench MOSFET 14 March 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology E... See More ⇒
pmn25ene.pdf
PMN25ENE 30 V, N-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg... See More ⇒
Detailed specifications: PMH950UPE, PMN120ENE, PMN120ENEA, PMN16XNE, PMN20ENA, PMN230ENE, PMN230ENEA, PMN25ENE, IRF1405, PMN280ENEA, PMN28UNE, PMN30ENEA, PMN30UN, PMN30UNE, PMN30XP, PMN30XPE, PMN40ENA
Keywords - PMN25ENEA MOSFET specs
PMN25ENEA cross reference
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PMN25ENEA substitution
PMN25ENEA replacement
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