PMN280ENEA Specs and Replacement
Type Designator: PMN280ENEA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.667 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: TSOP6
PMN280ENEA substitution
- MOSFET ⓘ Cross-Reference Search
PMN280ENEA datasheet
pmn280enea.pdf
PMN280ENEA 100 V, N-channel Trench MOSFET 11 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology ... See More ⇒
pmn28une.pdf
PMN28UNE 20 V, N-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge... See More ⇒
Detailed specifications: PMN120ENE, PMN120ENEA, PMN16XNE, PMN20ENA, PMN230ENE, PMN230ENEA, PMN25ENE, PMN25ENEA, 7N60, PMN28UNE, PMN30ENEA, PMN30UN, PMN30UNE, PMN30XP, PMN30XPE, PMN40ENA, PMN40ENE
Keywords - PMN280ENEA MOSFET specs
PMN280ENEA cross reference
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