PMN280ENEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN280ENEA
Marking Code: 3P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.667 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 1.2 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: TSOP6
PMN280ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN280ENEA Datasheet (PDF)
pmn280enea.pdf
PMN280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology
pmn28une.pdf
PMN28UNE20 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .