All MOSFET. PMN280ENEA Datasheet

 

PMN280ENEA Datasheet and Replacement


   Type Designator: PMN280ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.667 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
   Package: TSOP6
 

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PMN280ENEA Datasheet (PDF)

 ..1. Size:260K  nxp
 pmn280enea.pdf pdf_icon

PMN280ENEA

PMN280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology

 9.1. Size:278K  nxp
 pmn28une.pdf pdf_icon

PMN280ENEA

PMN28UNE20 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge

Datasheet: PMN120ENE , PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA , 7N60 , PMN28UNE , PMN30ENEA , PMN30UN , PMN30UNE , PMN30XP , PMN30XPE , PMN40ENA , PMN40ENE .

History: IRL1104

Keywords - PMN280ENEA MOSFET datasheet

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