All MOSFET. PMN28UNE Datasheet

 

PMN28UNE Datasheet and Replacement


   Type Designator: PMN28UNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 86 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TSOP6
 

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PMN28UNE Datasheet (PDF)

 ..1. Size:278K  nxp
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PMN28UNE

PMN28UNE20 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge

 9.1. Size:260K  nxp
 pmn280enea.pdf pdf_icon

PMN28UNE

PMN280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology

Datasheet: PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA , PMN280ENEA , RU7088R , PMN30ENEA , PMN30UN , PMN30UNE , PMN30XP , PMN30XPE , PMN40ENA , PMN40ENE , PMN48XPA .

History: CEP02N9 | TPC8203 | HFS2N65S | AP3403GH | FQB22P10TM | NCE60NF040T | SIE808DF

Keywords - PMN28UNE MOSFET datasheet

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