PMN28UNE Datasheet and Replacement
Type Designator: PMN28UNE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TSOP6
PMN28UNE substitution
PMN28UNE Datasheet (PDF)
pmn28une.pdf

PMN28UNE20 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge
pmn280enea.pdf

PMN280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology
Datasheet: PMN120ENEA , PMN16XNE , PMN20ENA , PMN230ENE , PMN230ENEA , PMN25ENE , PMN25ENEA , PMN280ENEA , RU7088R , PMN30ENEA , PMN30UN , PMN30UNE , PMN30XP , PMN30XPE , PMN40ENA , PMN40ENE , PMN48XPA .
History: AONX36322
Keywords - PMN28UNE MOSFET datasheet
PMN28UNE cross reference
PMN28UNE equivalent finder
PMN28UNE lookup
PMN28UNE substitution
PMN28UNE replacement
History: AONX36322



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