PMN28UNE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN28UNE
Marking Code: 3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.2 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TSOP6
PMN28UNE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN28UNE Datasheet (PDF)
pmn28une.pdf
PMN28UNE20 V, N-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching ElectroStatic Discharge
pmn280enea.pdf
PMN280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology
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